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IXTH 41N25
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
TO-247 AD Outline
g fs
C iss
V DS = 10 V; I D = 0.5 I D25 , pulse test
20
28
3200
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
510
pF
1
2
3
C rss
t d(on)
180
19
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
19
ns
t d(off)
t f
R G = 3.6 ? (External)
79
17
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q g(on)
110
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
18
48
nC
nC
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
.185 .209
.087 .102
.059 .098
b 1.0 1.4
.040 .055
R thJC
R thCK
0.25
0.42 K/W
K/W
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Source-Drain Diode
Ratings and Characteristics
Symbol
Test Conditions
(T J = 25°C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q rr
V GS = 0V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I F = 0.5 I S , -di/dt = 100 A/μs, V R = 100V
300
3.0
41
164
1.5
A
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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